Resulted from the FZM growth of the single-crystal silicon in ingots and the subsequent nuclear (neutron-transmutation) doping, dopants are not introduced into silicon, but produced from the atoms of silicon itself under the neutron radiation influence. This allows obtaining single-crystal silicon with the preset electrophysical values corresponding to modern requirements of power electronics and power industry for homogeneity of the structure, stability, and reproducibility of qualities.
High-purity single-crystal silicon is used extensively in production of semiconductor devices and IC chips.
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